English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A finite Schottky barrier and large contact resistance between monolayer MoS2and electrodes are the major bottlenecks in developing high-performancefield-effect transistors (FETs) that hinder the study of intrinsic quantumbehaviors such as valley-spin transport at low temperature. A gate-tunablegraphene electrode platform has been developed to improve the performance ofMoS2 FETs. However, intrinsic misalignment between the work function ofpristine graphene and the conduction band of MoS2 results in a large thresholdvoltage for the FETs, because of which Ohmic contact behaviors are observedonly at very high gate voltages and carrier concentrations (~1013 cm-2). Here,we present high-performance monolayer MoS2 FETs with Ohmic contact at a modestgate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphenewith a high intrinsic electron carrier density. The CVD nitrogen-doped grapheneand monolayer MoS2 hybrid FETs platform exhibited a large negative shiftedthreshold voltage of -54.2 V and barrier-free Ohmic contact under zero gatevoltage. Transparent contact by nitrogen-doped graphene led to a 214%enhancement in the on-current and a four-fold improvement in the field-effectcarrier mobility of monolayer MoS2 FETs compared with those of a pristinegraphene electrode platform. The transport measurements, as well as Raman andX-ray photoelectron spectroscopy analyses before and after thermal annealing,reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene isresponsible for the dominant effects of electron doping. Large-scalenitrogen-doped graphene electrodes provide a promising device platform for thedevelopment of high-performance devices and the study of unique quantumbehaviors.

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact