English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this work we perform investigations of the competition between domain-wallpinning and attraction by anti-notches and finite device borders. Theconditions for optimal geometries, which can attain a stable domain-wallpinning, are presented. This allow us the proposition of a three-terminalsdevice based on domain-wall pinning. We obtain, with very small pulses ofcurrent applied parallel to the nanotrack, a fast motion of the domain-wallbetween anti-notches. In addition to this, a swift stabilization of the pinneddomain-wall is observed with a high percentage of orthogonal magnetization,enabling high magnetoresistive signal measurement. Thus, our proposed device isa promising magnetoresistive random access memories with good scalability,duration, and high speed information storage.

Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM