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Double quantum dots (DQDs) hold great promise as building blocks for quantumtechnology as they allow for two electronic states to coherently couple.Defining QDs with materials rather than using electrostatic gating allows forQDs with a hard-wall confinement potential and more robust charge and spinstates. An unresolved problem is how to individually address these quantumdots, which is necessary for controlling quantum states. We here report thefabrication of double quantum dot devices defined by the conduction band edgeoffset at the interface of the wurtzite and zinc blende crystal phases of InAsin nanowires. By using sacrifical epitaxial GaSb markers selectively forming onone crystal phase, we are able to precisely align gate electrodes allowing usto probe and control each QD independently. We hence observe textbook-likecharge stability diagrams, a discrete energy spectrum and electron numbersconsistent with theoretical estimates and investigate the tunability of thedevices, finding that changing the electron number can be used to tune thetunnel barrier as expected by simple band diagram arguments.

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers