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We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over awide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG)and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12with (001) and (111) orientations, respectively. The PMA field is determined bymeasuring the induced anomalous Hall loops in Pt deposited on the garnet films.Due to positive magnetostriction constants, compressive in-plane strain inducesa PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nmthick TbIG at 300 K, and relaxes extremely slowly as the garnet film thicknessincreases. In bilayers consisting of Pt and EuIG or Pt and TbIG, robust PMA isrevealed by squared anomalous Hall hysteresis loops in Pt, the magnitude ofwhich appears to be only related to the net magnetic moment of ironsublattices. Furthermore, the magnetostriction constant is found to be2.7x10^(-5) for EuIG and 1.35x10^(-5) for TbIG, comparable with the values forbulk crystals. Our results demonstrate a general approach of tailoring magneticanisotropy of rare earth iron garnets by utilizing modulated strain viaepitaxial growth.

Systematic Control of Strain-Induced Perpendicular Magnetic Anisotropy in Epitaxial Europium and Terbium Iron Garnets Thin Films