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The interaction of Laguerre-Gauusian light at select wavelengths from 690 to810 nm with a p-type gallium arsenide (GaAs) photocathode photonic device andthe production of photogenerated electrons was investigated. Spin angularmomentum (SAM) and orbital angular momentum (OAM) were generated using linearor circular polarization and q-plates. The degree of polarization P from thephotogenerated electron signal was measured. At an excitation of 695 nm($E=1.78$ $eV$), $P_{OAM}=~2.1 \%$, $P_{SAM}=~1.3 \%$ and $P_{SAM, OAM (q=1)}=~3.4\%$, whereas, at 800 nm ($E=1.55$ $eV$), near bandgap, $P_{OAM}=~-14.7\%$,$P_{SAM}=~-2.6\%$ and $P_{SAM,OAM (q=1)} = ~4.0\%$.

The interaction of twisted Laguerre-Gaussian light with a GaAs photocathode to investigate photogenerated polarized electrons