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Metal-insulator transitions in two dimensional materials represent a greatopportunity for fast, low energy and ultra-dense switching devices. Due to thesmall energy difference between its semimetallic and semiconducting crystalphases, phase transition in MoTe$_2$ can occur with an unprecedented smallamount of external perturbations. In this work, we used density functionaltheory to predict critical strain and electrostatic voltage required to controlthe phase transition of 3d and 4d metal doped MoTe$_2$. We found that smalldoping contents dramatically affect the relative energies of MoTe$_2$ crystalphases and can largely reduced the energy input to trigger the transition,compared to pristine case. Moreover, the kinetics corresponding to the phasetransition in the proposed doped materials are several order of magnitudefaster than in MoTe$_2$. For example, we predict 6.3 \% Mn doped MoTe$_2$ toswitch phase under 1.19 V gate voltage in less than 1 $\mu$s with an inputenergy of 0.048 aJ/nm$^3$. Due to the presence of dopant, the controlled changeof phase is often complemented with a change in magnetic moment leading tomulti-functional phase transition.

Prediction of low energy phase transition in metal doped MoTe$_2$ from first principle calculations