English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observedby conventional DLTS in as-grown and at high concentrations in radiationdamaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, withactivation energies for electron emission of 0.59 and 0.67~eV, respectively. Weassign these components to$\mathrm{Z}_{1/2}^{=}\rightarrow\mathrm{Z}_{1/2}^{-}+e^{-}\rightarrow\mathrm{Z}_{1/2}^{0}+2e^{-}$transition sequences from negative-$U$ ordered acceptor levels of carbonvacancy (V$_{\mathrm{C}}$) defects at hexagonal/pseudo-cubic sites,respectively. By employing short filling pulses at lower temperatures, we wereable to characterize the first acceptor level of V$_{\mathrm{C}}$ on bothsub-lattice sites. Activation energies for electron emission of 0.48 and0.41~eV were determined for $\mathrm{Z}_{1}(-/0)$ and $\mathrm{Z}_{2}(-/0)$transitions, respectively. Based on trap filling kinetics and capture barriercalculations, we investigated the two-step transitions from neutral to doublynegatively charged Z$_{1}$ and Z$_{2}$. Positions of the first and secondacceptor levels of V$_{\mathrm{C}}$ at both lattice sites, as well as $(=\!/0)$occupancy levels were derived from the analysis of the emission and capturedata.

Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling