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Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high- κ n-MOSFET indicate that oxygen vacancy ( V O) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that the V O defect density required to accommodate the experimental measured recoverable threshold voltage degradation ( Δ V t h) is much higher than that of the reasonable atomic structure in the amorphous H f O 2. On the other hand, investigations on the disordered H f- O- H f network in the amorphous H f O 2 reveal their capabilities as charge trapping centers; therefore, in this work, atomic simulation work is performed, and our results show that the disordered H f- O- H f networks can act as effective electron capture centers with shallow levels near the S i conduction band. Moreover, the high density of the stretched H f- O- H f networks in the amorphous H f O 2 also significantly enriches the shallow electron traps in the oxide.Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high- κ n-MOSFET indicate that oxygen vacancy ( V O) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that the V O defect density required to accommodate the experimental measured recoverable threshold voltage degradation ( Δ V t h) is much higher than that of the reasonable atomic structure in the amorphous H f O 2. On the other hand, investigations on the disordered H f- O- H f network in the amorphous H f O 2 reveal their capabilities as charge trapping centers; therefore, in this work, atomic simulation work is performed, and our results show that the disordered H f- O- H f n...

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping