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Mn5Ge3 thin films have been demonstrated as a promising spin-injectormaterial for germanium-based spintronic devices. So far, Mn5Ge3 has been grownepitaxially only on Ge (111) substrates. In this letter we present the growthof epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film issynthetized via sub-second solid-state reaction between Mn and Ge upon flashlamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3is ferromagnetic with a Curie temperature of 283 K. Both the c-axis ofhexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100)surface. The millisecond-range flash epitaxy provides a new avenue for thefabrication of Ge-based spin-injectors fully compatible with CMOS technology.

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing