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We consider the effect of terahertz (THz) radiation on the conductivity ofthe ungated and gated graphene (G)-phosphorene (P) hybrid structures andpropose and evaluated the hot-carrier uncooled bolometric photodetectors basedon the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs)with the GP channel.  The operation of the GP-LDs and GP-FET photodetectors is associated with thecarrier heating by the incident radiation absorbed in the G-layer due to theintraband transitions. The carrier heating leads to the relocation of asignificant fraction of the carriers into the P-layer. Due to a relatively lowmobility of the carriers in the P-layer, their main role is associated with asubstantial reinforcement of the scattering of the carriers. The GP-FETbolometric photodetector characteristics are effectively controlled by the gatevoltage. A strong negative conductivity of the GP-channel can provide muchhigher responsivity of the THz hot-carriers GP-LD and GP-FET bolometricphotodetectors in comparison with the bolometers with solely the G-channels.

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures