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High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging taskdue to the large impedance mismatch between the low-conductivity amorphousstate and the high-conductivity crystalline state. In this letter, wedemonstrate an effective doping scheme using nickel to reduce the resistivitycontrast between the amorphous and crystalline states by nearly three orders ofmagnitude. Most importantly, our results show that doping produces the desiredelectrical performance without adversely affecting the film's opticalproperties. The nickel doping level is approximately 2% and the latticestructure remains nearly unchanged when compared with undoped-GST. Therefractive indices at amorphous and crystalline states were obtained usingellipsometry which echoes the results from XRD. The material's thermaltransport properties are measured using time-domain thermoreflectance (TDTR),showing no change upon doping. The advantages of this doping system will openup new opportunities for designing electrically reconfigurable high speedoptical elements in the near-infrared spectrum.

Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel doping: Towards RF-compatible phase-change devices