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We report a theoretical study of the structural, electronic and opticalproperties of hBN-AlN superlattice heterostructures (SL) using afirst-principles approach based on standard and hybrid Density FunctionalTheory. We consider short-period ($L<10$ nm) SL and find that their propertiesdepend strongly on the AlN layer thickness $L_{AlN}$. For $L_{AlN}\lesssim1$nm, AlN stabilizes into the hexagonal phase and SL display insulating behaviorwith type II interface band alignment and optical gaps as small as $5.2$ eV.The wurtzite phase forms for thicker AlN layers. In these cases built-inelectric fields lead to formation of polarization compensating charges as wellas two-dimensional conductive behavior for electronic transport alonginterfaces. We also find defect-like states localized at interfaces which areoptically active in the visible range.

First principles study of hBN-AlN short-period superlattice heterostructures