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In semiconductor superlattices, when Bragg oscillating electrons interactwith an input electromagnetic field, frequency multiplication is possible. Anideal superlattice has a purely antisymmetric voltage current response and canthus produce only odd harmonics. However, real world superlattices can alsohave even harmonic response and that increases the range of possible outputfrequencies. These effects have been recently explained with a predictive modelthat combines an Ansatz solution for the Boltzmann Equation with aNonequilibrium Green's Functions approach. This predictive tool, coupled withrecent progress on GHz input sources, support the growing interest indeveloping compact room temperature devices that can operate from the GHz tothe THz range. The natural question to ask is what efficiencies can beexpected. This paper addresses this issue by investigating power-conversionefficiency in irradiated semiconductor superlattices. Interface imperfectionsare consistently included in the theory and they strongly influence the poweroutput of both odd and even harmonics. Good agreement is obtained for predictedodd harmonic outputs with experimental data for a wide frequency range. Theintrinsic conversion efficiency used is based on the estimated amplitude of theinput field inside the sample and thus independent of geometrical factors thatcharacterize different setups. The method opens the possibility of designingeven harmonic output power by controlling the interface quality.

Controlling the harmonic conversion efficiency in semiconductor superlattices by interface roughness design