English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material withtopologically protected surface states in which spin-momentum locking mayenable spin-polarized and defect-tolerant transport. In this work, we achievedthe epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a keymaterial for microelectronics. Germanium also exhibits interesting propertieswith respect to the electron spin such as a spin diffusion length of severalmicrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aimat combining the long spin diffusion length of Ge with the spin-momentumlocking at the surface of Bi$_2$Se$_3$. We first performed a thoroughstructural analysis of Bi$_2$Se$_3$ films using electron and x-ray diffractionas well as atomic force microscopy. Then, magnetotransport measurements at lowtemperature showed the signature of weak antilocalization as a result oftwo-dimensional transport in the topologically protected surface states ofBi$_2$Se$_3$. Interestingly, the magnetotransport measurements also point outthat the conduction channel can be tuned between the Bi$_2$Se$_3$ film and theGe layer underneath by means of the bias voltage or the applied magnetic field.This result suggests that the Bi$_2$Se$_3$/Ge junction is a promising candidatefor tuning spin-related phenomena at interfaces between TIs and semiconductors.

Magnetotransport in Bi$_2$Se$_3$ thin films epitaxially grown on Ge(111)