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CuMnAs with perpendicular magnetic anisotropy is proposed as an activematerial for antiferromagnetic memory. Information can be stored in theantiferromagnetic domain state, while writing and readout can rely on theexistence of the surface magnetization. It is predicted, based onfirst-principles calculations, that easy-axis anisotropy can be achieved inbulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. Thiseffect is attributed to the changing occupation of certain electronic bandsnear the Fermi level induced by the hole doping. The calculated temperaturedependence of the magnetic anisotropy does not exhibit any anomalies. ThinCuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.

Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications