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Understanding interface properties in MoS2 field effect transistors with ahigh-k gate insulator is critical for improving the performance of the device.Here, by applying the time domain charge pumping method, the elementary processfor capture and emission of electrons to the interface states is monitoreddirectly using a fast acquisition system. The main outcome is the detection ofthe clear difference in the capture and emission process of electrons to theinterface states. In addition to the transient current response for gatecapacitance, the current peak is observed during electron capture, while thebroad tail is detected during electron emission. This different behavior isassociated with the fact that the time constant for electron capture is muchshorter than that for electron emission. Moreover, Dit is evaluated to be inthe range of 1012 - 1013 cm-2 eV-1, which is comparable with that estimatedfrom subthreshold swing.

Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET