English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown onsemiconducting Ge substrates are investigated by synchrotron X-ray diffractionand first-principles density functional theory. By systematically tuning Zrcontent x, the effects of bonding at the interface and epitaxial strain on thephysical structure of the film can be distinguished. The interfacial perovskitelayers are found to be polarized as a result of cation-anion ionicdisplacements perpendicular to the perovskite/semiconductor interface. We finda correlation between the observed buckling and valence band offsets at theSrZr$_{x}$Ti$_{1-x}$O$_3$/Ge interface. The theoretical valence band offsetsfor the polar structures are in agreement with reported X-ray photoelectronspectroscopy measurements. These results have important implications for theintegration of functional oxide materials with established semiconductor basedtechnologies.

Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge