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Tunnel-injection lasers promise advantages in modulation bandwidth andtemperature stability in comparison to conventional laser designs. In thispaper, we present results of a microscopic theory for laser properties oftunnel-injection devices and a comparison to a conventional quantum-dot laserstructure. In general, the modulation bandwidth of semiconductor lasers isaffected by the steady-state occupations of electrons and holes via thepresence of spectral hole burning. For tunnel-injection lasers with InGaAsquantum dot emitting at the telecom wavelength of 1,55$\mu$m, we demonstratethat the absence of spectral hole burning favors this concept over conventionalquantum-dot based lasers.

Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis