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The dynamical characteristics of a single frequency low pressure capacitivelycoupled plasma (CCP) device under varying applied RF voltages and drivingfrequencies are studied using particle-in-cell/Monte Carlo collisionsimulations. An operational regime is identified where for a given voltage theplasma density is found to remain constant over a range of driving frequenciesand to then increase rapidly as a function of the driving frequency. Thethreshold frequency for this mode transition as well as the value of theconstant density is found to increase with an increase in the applied voltage.Over the constant density range, for a given voltage, the sheath width is seento increase as a function of the increasing driving frequency, thereby changingthe ion energy without affecting the ion density. Our parametric study thusindicates that the twin knobs of the applied voltage and driving frequencyoffer a means of independently controlling the density and the ion energy in alow pressure CCP device that may be usefully exploited for plasma processingapplications.

Plasma density and ion energy control via driving frequency and applied voltage in a low pressure capacitively coupled plasma discharge