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We demonstrate an in-situ technique to tune the emission energy ofsemiconductor quantum dots. The technique is based on laser-induced atomicintermixing applied to nanowire quantum dots grown using a site-selectiveprocess that allows for the deterministic tuning of individual emitters. Atuning range of up to 15 meV is obtained with a precision limited by the laserexposure time. A distinct saturation of the energy shift is observed, whichsuggests an intermixing mechanism relying on grown-in defects that aresubsequently removed from the semiconductor material during annealing. Theability to tune different emitters into resonance with each other will berequired for fabricating remote quantum dot-based sources of indistinguishablephotons for secure quantum networks.

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing