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Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene onSiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. Theh-BN films form ~2-micrometer size grains with a preferred orientation of 30degrees relative to the surface graphene. Low-energy electron microscopy isemployed to provide definitive signatures of the number and composition oftwo-dimensional (2D) planes across the surface. These grains are found to formby substitution for the surface graphene, with the C atoms produced by thissubstitution then being incorporated below the h-BN (at the interface betweenthe existing graphene and the SiC) to form a new graphene plane.

Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene