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We report on the electrical properties of polycrystalline NbO2 thin filmvertical devices grown on TiN coated SiO2/Si substrates using pulsed laserdeposition. First, we analyzed the thickness and contact size dependences ofthreshold switching of NbO2 films grown in 10 mTorr Ar/O2 mixed growthpressure, where 25.1%/74.9% of NbO2/Nb2O5 surface composition content wasestimated by ex-situ x-ray photoelectron spectroscopy. The leakage currentproperties in the insulating state were dominated by trap-charge assistedPoole-Frankel conduction mechanism. The threshold switching and self-sustainedcurrent oscillatory behavior of films with different NbO2/Nb2O5 compositionratios was measured and analyzed. The second film was grown in lower (1 mTorr)growth pressure which resulted in a higher (34.2%/65.8%) NbO2/Nb2O5 filmsurface composition. The film grown in higher growth pressure demonstratedlower off-state leakage current, faster switching and self-sustainedoscillations with higher frequency than the film grown in lower growthpressure.

Structural and electrical characterization of NbO2 thin film vertical devices grown on TiN-coated SiO2/Si substrates