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WO3 thin films were grown by atomic layer deposition and spectroscopicellipsometry data gathered in the photon energy range of 0.72-8.5 eV and frommultiple samples was utilized to determine the frequency dependentcomplex-valued isotropic dielectric function for WO3. We employ acritical-point model dielectric function analysis and determine a parameterizedset of oscillators and compare the observed critical-point contributions withthe vertical transition energy distribution found within the band structure ofWO3 calculated by density functional theory. We investigate surface roughnesswith atomic force microscopy and compare to ellipsometric determined effectiveroughness layer thickness.

Critical-point model dielectric function analysis of WO$_3$ thin films deposited by atomic layer deposition techniques