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Solid-state qubit manipulation and read-out fidelities are reachingfault-tolerance, but quantum error correction requires millions of physicalqubits and thus a scalable quantum computer architecture. To solve signal-linebandwidth and fan-out problems, microwave sources required for qubitmanipulation might be embedded close to the qubit chip, typically operating attemperatures below 4 K. Here, we perform the first low temperature measurementsof a 130 nm BiCMOS based SiGe voltage controlled oscillator. The devicemaintains its functionality from 300 K to 4 K. We determined the dependence offrequency and output power on temperature and magnetic field up to 5 T andmeasured the temperature influence on noise performance. While the output powertends to increase, the frequency shift is 3 % for temperature and 0.02 % forthe field dependence, respectively, both relevant for highly coherent spinqubit applications. We observe no improvement on output noise, but increasedoutput flickering.

30 GHz-voltage controlled oscillator operating at 4 K