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The main challenge in the development of non-classical light sources remainstheir brightness that limits the data transmission and processing rates as wellas the realization of practical devices operating in the telecommunicationrange. To overcome this issue, we propose to utilize universal and flexiblein-situ electron-beam lithography and hereby, we demonstrate a successfultechnology transfer to telecom wavelengths. As an example, we fabricate andcharacterize especially designed photonic structures with strain-engineeredsingle InGaAs/GaAs quantum dots that are deterministically integrated intodisc-shaped mesas. Utilizing this approach, an extraction efficiency intofree-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has beenexperimentally obtained in the 1.3 \mu m wavelength range in agreement withfinite-element method calculations.

aip advances

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in  deterministic photonic structures at 1.3 \mu m fabricated by in-situ  electron-beam lithography