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The structural properties of Er-doped AlNO epilayers grown by radio frequencymagnetron sputtering were studied by Extended X-ray Absorption Fine Structure(EXAFS) spectra recorded at the Er L 3 edge. The analysis revealed that Ersubstitutes for Al in all the studied samples and the increase in Erconcentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er 2O 3 or Er clusters. Simultaneously recorded X-ray Absorption Near EdgeStructure (XANES) spectra verify that the bonding configuration of Er issimilar in all studied samples. The Er-N distance is 2 constant at 2.18-2.19{\AA} i.e. approximately 15% larger than the Al-N bondlength, revealing thatthe introduction of Er in the cation sublattice causes considerable localdistortion. The Debye-Waller factor, which measures the static disorder, of thesecond nearest shell of Al neighbors, has a local minimum for the samplecontaining 1% Er that coincides with the highest photoluminescence efficiencyof the sample set.

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er x films with x $\le$ 3.6%