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We use room temperature ion beam assisted sputtering (IBAS) to depositniobium nitride thin films. Electrical and structural characterizations wereperformed by electric transport and magnetization measurements at variabletemperatures, X-ray diffraction and atomic force microscopy. Compared toreactive sputtering of NbN, films sputtered in presence of an ion beam showremarkable increase in the superconducting critical temperature T$_{\rm{c}}$,while exhibiting lower sensitivity to nitrogen concentration during deposition.Thickness dependence of the superconducting critical temperature is comparableto films prepared by conventional methods at high substrate temperatures and isconsistent with behavior driven by quantum size effects or weak localization.

Room temperature deposition of superconducting Niobium Nitride films by ion beam assisted sputtering