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A half-Heusler material FeNb$_{0.8}$Ti$_{0.2}$Sb has been identified as apromising thermoelectric material due to its excellent thermoelectricperformance at high temperatures. The origins of the efficient thermoelectricperformance are investigated through a series of low-temperature (2 - 400 K)measurements. The high data coherence of the low and high temperatures isobserved. An optimal and nearly temperature-independent carrier concentrationis identified, which is ideal for the power factor. The obtained single type ofhole carrier is also beneficial to the large Seebeck coefficient. Theelectronic thermal conductivity is found to be comparable to the latticethermal conductivity and becomes the dominant component above 200 K. Thesefindings again indicate that electron scattering plays a key role in theelectrical and thermal transport properties. The dimensionless figure of meritis thus mainly governed by the electronic properties. These effects obtained atlow temperatures with the avoidance of possible thermal fluctuations togetheroffer the physical origin for the excellent thermoelectric performance in thismaterial.

Origin of efficient thermoelectric performance in half-Heusler FeNb$_{0.8}$Ti$_{0.2}$Sb