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2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbedfor fundamental physics and device applications. While the discussion of thephysical origins of this phenomenon continues, the recent discovery of oxide2DEGs at non-epitaxial interfaces between amorphous and crystalline oxidesprovides useful insight onto this debate. Furthermore, using amorphous oxidesoffers a low-cost route towards realizing 2DEGs for device applications. Inthis work, the band offsets of a simple model system of amorphous-crystallineoxide interface are investigated. The model system consists of amorphous$Al_2O_3$ grown on single-crystalline (001) $SrTiO_3$. X-ray photoelectronspectroscopy is employed to study the chemical states, band gap and bandoffsets at the interface. The density of ionic defects near the interface isfound to be below the detection limit, and the interface is found to beinsulating. Analysis of the relative band structure yields significantinterfacial barriers, exceeding 1.05 eV for holes and 2.0 eV for electrons. Thebarrier for holes is considerably larger than what is known for relatedmaterials systems, outlining the promise of using amorphous $Al_2O_3$ as aneffective and simple insulator, an important building block for oxide-basedfield effect devices.

Band offsets at amorphous-crystalline $Al_2O_3-SrTiO_3$ oxide interfaces