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We report on the controlled growth of h-BN/graphite by means of molecularbeam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests aninterface without any reaction or intermixing, while the angle resolvedphotoemission spectroscopy (ARPES) measurements show that the h-BN layers areepitaxially aligned with graphite. A well-defined band structure is revealed byARPES measurement, reflecting the high quality of the h-BN films. The measuredvalence band maximum (VBM) located at 2.8 eV below the Fermi level reveals thepresence of undoped h-BN films (band gap ~ 6 eV). These results demonstratethat, although only weak van der Waals interactions are present between h-BNand graphite, a long range ordering of h-BN can be obtained even onpolycrystalline graphite via van der Waals epitaxy, offering the prospect oflarge area, single layer h-BN.

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure