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Since it is undesirable to require an external magnetic field for on-chipmemory applications, we investigate the use of a Rashba effective fieldalternatively for assisting the electric-field-induced switching operation of athree terminal perpendicular magnetic tunnel junction (pMTJ). By conductingmacro-spin simulation, we show that a pMTJ with thermal stability of 61 can beswitched in 0.5 ns consuming a switching energy of 6 fJ, and the voltageoperation margin can be improved to 0.8 ns. Furthermore, the results alsodemonstrate that a heavy metal system that can provide large field-like torquerather than damping-like torque is favored for the switching.

Electric-field-induced Three-terminal pMTJ Switching in the absence of an External Magnetic Field