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A lateral-type spin-photodiode having a refracting facet on a side edge ofthe device is proposed and demonstrated at room temperature. The light shedhorizontally on the side of the device is refracted and introduced directlyinto a thin InGaAs active layer under the spin-detecting Fe contact in whichspin-polarized carriers are generated and injected into the Fe contact througha crystalline AlOx tunnel barrier. Experiments have been carried out with acircular polarization spectrometry set up, through which helicity-dependentphotocurrent component, dI, is obtained with the conversion efficiency F ~ 0.4%, where F is the ratio between dI and total photocurrent Iph. This value isthe highest reported so far for pure lateral-type spin-photodiodes. It isdiscussed through analysis with a model consisting of drift-diffusion andquantum tunneling equations that a factor that limits the F value is unoccupiedspin-polarized density-of-states of Fe in energy region into whichspin-polarized electrons in a semiconductor are injected.

A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window