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The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe}structures was studied. The AC conductivity of samples with hole densities from$3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured inperpendicular magnetic fields up to $8~\text{T}$ using a contactless acousticmethod. From the analysis of the temperature dependence of conductivityoscillations, the $\mathrm{g}_{\perp}$-factor of each sample was determined.The $\mathrm{g}_{\perp}$-factor was found to be decreasing approximatelylinearly with hole density. This effect is attributed to non-parabolicity ofthe valence band.

Effective g factor of 2D holes in strained Ge quantum wells