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We demonstrate low-operational-current W/Co$_{20}$Fe$_{60}$B$_{20}$/MgO spinHall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates.Thanks to a record high spin Hall angle of the $\beta$-phase W ($\theta_{SH}$ =-0.53), a very low threshold current density of 3.3 $\times$ 10$^{7}$ A/cm$^2$can be achieved. Together with their very wide frequency tunability (7-28 GHz),promoted by a moderate perpendicular magnetic anisotropy, this makesHiR-Si/W/CoFeB based SHNOs potential candidates for wide-band microwave signalgeneration. Their CMOS compatibility offers a promising route towards theintegration of spintronic microwave devices with other on-chip semiconductormicrowave components.

CMOS compatible W/CoFeB/MgO spin Hall nano-oscillators with wide frequency tunability