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Recent research has indicated that introducing impurities that increase theresistivity of Pt can enhance the efficiency of the spin Hall torque itgenerates. Here we directly demonstrate the usefulness of this strategy byfabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctionsthat utilize the spin Hall torque from a $\rm{Pt}_{85}\rm{Hf}_{15}$ alloy, andmeasuring the critical currents for switching. We find that$\rm{Pt}_{85}\rm{Hf}_{15}$ reduces the switching current densities compared topure Pt by approximately a factor of 2 for both quasi-static ramped currentbiases and nanosecond-scale current pulses, thereby proving the feasibility ofthis approach to assist in the development of efficient embedded magneticmemory technologies.

Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of $\rm{Pt}_{85}\rm{Hf}_{15}$ Alloy