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Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111)substrates is reported, along with a systematic investigation of the evolutionof Ge growth, and structural defects in the grown epilayer. While Ge growthbegins in the Volmer-Weber growth mode, the resultant islands coalesce withinthe first 10 nm of growth, beyond which a smooth two-dimensional surfaceevolves. Coalescence of the initially formed islands results in formation ofrotation and reflection microtwins, which constitute a volume fraction of lessthan 1 %. It is also observed that while the stacking sequence of the (111)planes in the Ge epilayer is similar to that of the Si substrate, the (111)planes of the Gd2O3 epilayer are rotated by 180 degree about the [111]direction. In metal-semiconductor-metal schottky photodiodes fabricated withthese all-epitaxial Ge-on-insulator (GeOI) samples, significant suppression ofdark current is observed due to the presence of the Gd2O3 epilayer. Theseresults are promising for application of these GeOI structures as virtualsubstrates, or for realization of high-speed group-IV photonic components.

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures