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This paper is the first report of n-type GaAs as a cryogenic scintillationradiation detector for the detection of electron recoils from interacting darkmatter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAssamples from two commercial suppliers and with different silicon and boronconcentrations were studied for their low temperature optical and scintillationproperties. All samples are n-type even at low temperatures and exhibitemission between silicon donors and boron acceptors that peaks at 1.33 eV (930nm). The lowest excitation band peaks at 1.44 eV (860 nm) and the overlapbetween the emission and excitation bands is small. The X-ray excitedluminosities range from 7 to 43 photons/keV. Thermally stimulated luminescencemeasurements show that n-type GaAs does not accumulate metastable radiativestates that could cause afterglow. Further development and use with cryogenicphotodetectors promises a remarkable combination of large target size,ultra-low backgrounds, and a sensitivity to electron recoils of a few eV thatwould be produced by DM particles as light as a few MeV/c2.

Cryogenic Scintillation Properties of n-Type GaAs for the Direct Detection of MeV/c2 Dark Matter