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Graphene is considered as a promising platform for detectors ofhigh-frequency radiation up to the terahertz (THz) range due to graphene$'$ssuperior electron mobility. Previously it has been shown that graphene fieldeffect transistors (FETs) exhibit room temperature broadband photoresponse toincoming THz radiation thanks to the thermoelectric and/or plasma waverectification. Both effects exhibit similar functional dependences on the gatevoltage and therefore it was found to be difficult to disentangle thesecontributions in the previous studies. In this letter, we report on combinedexperimental and theoretical studies of sub-THz response in graphenefield-effect transistors analyzed at different temperatures. Thistemperature-dependent study allowed us to reveal the role ofphoto-thermoelectric effect, p-n junction rectification, and plasmonicrectification in the sub-THz photoresponse of graphene FETs.

Dual Origin of Room Temperature Sub-Terahertz Photoresponse in Graphene Field Effect Transistors