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Modern bandgap engineered electronic devices are typically made ofmulti-semiconductor multi-layer heterostructures that pose a major challenge tosilicon-era characterization methods. As a result, contemporary bandgapengineering relies mostly on simulated band structures that are hardly eververified experimentally. Here, we present a method that experimentallyevaluates bandgap, band offsets, and electric fields, in complexmulti-semiconductor layered structures and it does so simultaneously in all thelayers. The method uses a modest optical photocurrent spectroscopy setup atambient conditions. The results are analyzed using a simple model forelectro-absorption. As an example, we apply the method to a typical GaN highelectron mobility transistor structure. Measurements under various externalelectric fields allow us to experimentally construct band diagrams, not only atequilibrium, but also under any other working conditions of the device. Theelectric fields are then used to obtain the charge carrier density and mobilityin the quantum well as a function of the gate voltage over the entire range ofoperating conditions of the device. The principles exemplified here may serveas guidelines for the development of methods for simultaneous characterizationof all the layers in complex, multi-semiconductor structures.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures