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Dynamical theories for piezotronic and piezo-phototropic devices areincomplete. In this work, we aim to establish a theoretical method formodelling dynamic characteristics of devices exhibiting these two emergingphenomena. By taking the simplest piezotronic device-PN junction as an example,we develop a small signal model and the united approach to analyze itsdiffusion capacitance and conductance under both low and high frequencyexternal compressive stresses, which is different from the traditionalconsiderations that treat the piezopotential as a static value. Furthermore, weexpand the theory into piezo-phototronic devices e.g., a light emitting diode(LED). The dynamic recombination rate and light emitting intensity arequantitatively calculated under different frequencies of external compressivestresses. The work complements existing works that only consider the staticcases. The work can shed light in future high frequency piezoelectronic devicesexploration.

Dynamical model for piezotronic and piezo-phototronic devices under low and high frequency external compressive stresses