English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates byplasma-assisted molecular beam epitaxy at conventional growth temperatures ofabout 650 {\deg}C do not exhibit any detectable luminescence even at 10 K. Inthe present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- andN-polar GaN substrates at a constant temperature of 730 {\deg}C. Thisexceptionally high temperature results in a vanishing In incorporation for theGa-polar sample. In contrast, quantum wells with an In content of 20% andabrupt interfaces are formed on N-polar GaN. Moreover, these quantum wellsexhibit a spatially homogeneous green luminescence band up to room temperature,but the intensity of this band is observed to strongly quench with temperature.Temperature-dependent photoluminescence transients show that this thermalquenching is related to a high density of nonradiative Shockley-Read-Hallcenters with large capture coefficients for electrons and holes.

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature