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We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrierheterostructure using both photocapacitance and photocurrent spectroscopies atroom temperature. Photocapacitance spectra show well defined resonance peak ofindirect excitons formed around the Gamma-AlAs barrier. Unlike DC-photocurrentspectra, frequency dependent photocapacitance spectra interestingly red shift,sharpen up and then decrease with increasing tunneling at higher biases. Suchdissimilarities clearly point out that different exciton dynamics govern thesetwo spectral measurements. We also argue why such quantum confined dipoles ofindirect excitons can have thermodynamically finite probabilities to surviveeven at room temperature. Finally, our observations demonstrate thatphotocapacitance technique, which was seldom used to detect excitons in thepast, is useful for selective detection and experimental tuning of relativelysmall numbers (~10^11/cm2) of photo-generated indirect excitons having largeeffective dipole moments in this type of quasi-two dimensionalheterostructures.

journal of applied physics

Experimental evidences of quantum confined 2D indirect excitons in  single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room  temperature