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Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic colorcenters whose long coherence times and near-telecom operating wavelengths makethem promising for scalable quantum communication technologies compatible withexisting fiber optic networks. However, local strain inhomogeneity can randomlyperturb their optical transition frequencies, which degrades theindistinguishability of photons emitted from separate defects, and hinderstheir coupling to optical cavities. Here we show that electric fields can beused to tune the optical transition frequencies of single neutral divacancydefects in 4H-SiC over a range of several GHz via the DC Stark effect. The sametechnique can also control the charge state of the defect on microsecondtimescales, which we use to stabilize unstable or non-neutral divacancies intotheir neutral charge state. Using fluorescence-based charge state detection, weshow both 975 nm and 1130 nm excitation can prepare its neutral charge statewith near unity efficiency.

Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide