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First-principles density functional theory calculations are used to reveal a quantitative relationship between the dielectric breakdown field and hydrostatic pressure of crystalline Si. The electronic band structure, phonon dispersion, and electron scattering rate are computed for pressures from 62.2 kbar (compressive) to -45.6 kbar (tensile) to estimate the rate of kinetic energy gain and loss for the electron. The theoretical dielectric breakdown fields are then determined using the von Hippel–Frohlich criterion. Compressive stresses lead to a lower breakdown field, while significant increases in the dielectric breakdown field can be achieved by tensile stresses.

Dielectric breakdown field of strained silicon under hydrostatic pressure