English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

The physical process driving low-current non-radiative recombinations inhigh-quality III-Nitride quantum wells is investigated. Lifetime measurementsreveal that these recombinations scale with the overlap of the electron andhole wavefunctions and show weak temperature dependence, in contrast withcommon empirical expectations for Shockley-Read-Hall recombinations. A model offield-assisted multiphonon point defect recombination in quantum wells isintroduced, and shown to quantitatively explain the data. This study providesinsight on the high efficiency of III-Nitride light emitters.

Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells