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Photovoltaic (PV) response of epitaxial BiFe0.95Mn0.05O3 thin film grown bypulsed laser deposition has been investigated on a broad range of temperature.Wavelength dependent photovoltaic effect shows the contribution of in gap levelstates most likely connected to the manganese doping on the B-site of theperovskite unit cells and presence of defects (Bi and O vacancies). Thetemperature dependent response of the PV response rules out electromigrationand/or Schottky barriers as dominant mechanisms. This is corroborated with theobserved switchable photovoltaic effect that can be explained either by thedepolarizing field or bulk photovoltaic effect. In addition the PV responseshows strong correlation with the low temperature polaronic like conductionmechanism and high open circuit voltage (2.5V) is detected in the investigatedvertical capacitive geometry.

Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe0.95Mn0.05O3 thin film