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We examine the effect of carrier localization due to random alloyfluctuations on the radiative and Auger recombination rates in InGaN quantumwells as a function of alloy composition, crystal orientation, carrier density,and temperature. Our results show that alloy fluctuations reduce individualtransition matrix elements by the separate localization of electrons and holes,but this effect is overcompensated by the additional transitions enabled bytranslational symmetry breaking and the resulting lack of momentumconservation. Hence, we find that localization increases both radiative andAuger recombination rates, but that Auger recombination rates increase by oneorder of magnitude more than radiative rates. Furthermore, we demonstrate thatlocalization has an overall detrimental effect on the efficiency-droop andgreen-gap problems of InGaN LEDs.

applied physics letters

Impact of carrier localization on recombination in InGaN quantum wells  and the efficiency of nitride light-emitting diodes: insights from theory and  numerical simulations