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A thin Hafnium film is shown to act both as an effective diffusion barrierfor manganese at a thickness of 0.7 nm, and as an effective exchange couplinglayer in a sandwich structure with perpendicular magnetic anisotropy. Themagnetic layers are Co$_{20}$Fe$_{60}$B$_{20}$ and the low moment ferrimagnetMn$_2$Ru$_x$Ga (MRG). The coupling changes sign at the compensation temperatureof MRG and the exchange energy reaches 0.11 mJm$^{-2}$ for the thinnest Hfinterlayers. Ruthenium, the usual metal of choice for coupling ferromagneticlayers in thin film heterostructures, cannot be used with the zero-moment halfmetal MRG because of Ru interdiffusion. Due to its large coercivity nearcompensation, the MRG can act as an effective source of exchange pinning.

Exchange coupling of a perpendicular ferromagnet to a half-metallic compensated ferrimagnet via a thin hafnium interlayer