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Diamond is a promising platform for the development of technologicalapplications in quantum optics and photonics. The quest for color centers withoptimal photo-physical properties has led in recent years to the search fornovel impurity-related defects in this material. Here, we report on asystematic investigation of the photo-physical properties of two He-related(HR) emission lines at 535 nm and 560 nm created in three different diamondsubstrates upon implantation with 1.3 MeV He+ ions and subsequent annealing.The spectral features of the HR centers were studied in an "optical grade"diamond substrate as a function of several physical parameters, namely themeasurement temperature, the excitation wavelength and the intensity ofexternal electric fields. The emission lifetimes of the 535 nm and 560 nm lineswere also measured by means of time-gated photoluminescence measurements,yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns,respectively. The Stark shifting of the HR centers under the application of anexternal electrical field was observed in a CVD diamond film equipped withburied graphitic electrodes, suggesting a lack of inversion symmetry in thedefects' structure. Furthermore, the photoluminescence mapping under 405 nmexcitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+ion fluence enabled to identify the spectral features of both the HR emissionlines from the same localized optical spots. The reported results provide afirst insight towards the understanding of the structure of He-related defectsin diamond and their possible utilization in practical applications

Photo-physical properties of He-related color centers in diamond