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By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Taheterostructures we tune the perpendicular magnetic anisotropy and the coercivefield of the ferromagnetic layer. We demonstrate that this has a majorinfluence on the spin Hall switching current density and its dependence on theexternal magnetic field. Despite a rather small effective spin Hall angle of$\theta_\mathrm{SH} \approx -0.07$, we obtain switching current densities aslow as $2 \times 10^{10}$ A/m$^2$ with a 2 \AA{} Au interlayer. We find thatthe Dzyaloshinskii-Moriya interaction parameter $D$ is reduced with Au or Pdinterlayers, and the perpendicular anisotropy field is reduced by an order ofmagnitude with the Pd interlayer. The dependence of the switching currentdensity on the current pulse width is quantitatively explained with a domainwall nucleation and propagation model. Interface engineering is thus found tobe a suitable route to tailor the current-induced magnetization switchingproperties of magnetic heterostructures.

applied physics letters

Tuning the perpendicular magnetic anisotropy, spin Hall switching  current density and domain wall velocity by submonolayer insertion in Ta /  CoFeB / MgO heterostructures